| PART |
Description |
Maker |
| WED2CG472512V9D2 WED2CG472512V10D2 WED2CG472512V12 |
16MB (4x512Kx72) SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| EDI2AG272128V10D1 EDI2AG272128V9D1 EDI2AG272128V12 |
2 Megabyte Sync/Sync Burst, Small Outline DIMM
|
WEDC[White Electronic Designs Corporation]
|
| EDI2CG472256V EDI2CG472256V10D2 EDI2CG472256V12D2 |
8 Megabyte Sync/Sync Burst, Dual Key DIMM
|
White Electronic Designs Corporation
|
| P87C380 P83C380 P83C180 |
80C51 type core
Microcontrollers for monitors with DDC interface/ auto-sync detection and sync proc.
|
NXP Semiconductors
Philips Semiconductors
|
| GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| P83C380 P83C280 P87C380 P83C880 P83C180 |
Microcontrollers for monitors with DDC interface, auto-sync detection and sync proc.
Microcontrollers for monitors with DDC interface auto-sync detection and sync proc.
|
PHILIPS[Philips Semiconductors]
|
| GS88136BD-200I GS88136BD-133I GS88136BD-150 GS8813 |
200MHz 6.5ns 256K x 36 9Mb sync burst SRAM
133MHz 8.5ns 256K x 36 9Mb sync burst SRAM
150MHz 7.5ns 256K x 36 9Mb sync burst SRAM
166MHz 7ns 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
| FT500DL FT500DL-24 FT500DL-4 FT500DL-20 FT500DL-16 |
Phase control SCR. 500A, 400V.
Phase Control SCR 500 Amperes Avg 200-1400 Volts
Phase control SCR. 500A, 1200V.
Phase control SCR. 500A, 200V.
Phase control SCR. 500A, 1000V.
Phase control SCR. 500A, 800V.
Phase control SCR. 500A, 300V.
Phase control SCR. 500A, 500V.
Phase control SCR. 500A, 600V.
Phase control SCR. 500A, 1400V.
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| CY7C4261 CY7C4271 7C4261 |
16Kx9 Deep Sync FIFOs(16Kx9 位深同步先进先出（FIFO
From old datasheet system
16K/32Kx9 Deep Sync FIFOs
|
Cypress Semiconductor Corp.
|
